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ESD5V0S1U-02V
Characteristics
Table 4
RF characteristics at T A = 25 °C, unless otherwise specified
Parameter
Symbol
Min.
Values
Typ.
Max.
Unit
Note /
Test Condition
Diode capacitance
Diode capacitance
C L
C L
–
–
35
20
40
–
pF
pF
V R = 0 V, f = 1 MHz
V R = 2.5 V, f = 1 MHz
Table 5
ESD characteristics at T A = 25 °C, unless otherwise specified
Parameter
Symbol
Min.
Values
Typ.
Max.
Unit
Note /
Test Condition
Clamping voltage
1)
V CL
–
7.6
–
V
I pp = 5 A,
t p = 30 ns, pin 1-2
Clamping voltage 1)
V CL
–
10.5
–
V
I pp = 16 A,
t p = 30 ns, pin 1-2
Clamping voltage 1)
V CL
–
14.5
–
V
I pp = 30 A,
t p = 30 ns, pin 1-2
Forward clamping
voltage 1)
Forward clamping
voltage 1)
Forward clamping
voltage 1)
Dynamic resistance 1)
V FC
V FC
V FC
R DYN
–
–
–
–
2
4.3
7.3
0.2
–
–
–
–
V
V
V
?
I pp = 5 A,
t p = 30 ns, pin 2-1
I pp = 16 A,
t p = 30 ns, pin 2-1
I pp = 30 A,
t p = 30 ns, pin 2-1
t p =30 ns, pin 2-1
Dynamic resistance
1)
R DYN
– 0.3 –
?
t p =30 ns, pin 1-2
1)According TLP tests. Please refer to Application Note AN-210 [1]
Final Data Sheet
7
Revision 1.1, 2012-05-31
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